Universidad Politécnica de Madrid-ko ikertzaileekin lankidetzan egindako argitalpenak (10)

2018

  1. Implementation of a Testbed to Analysis a SDN Based GPON

    European Conference on Optical Communication, ECOC

2000

  1. High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11n)A GaAs

    Journal of Crystal Growth, Vol. 213, Núm. 3-4, pp. 214-220

1997

  1. Charge accumulation effects in InGaAs/GaAs [111]oriented piezoelectric multiple quantum wells

    Microelectronics Journal, Vol. 28, Núm. 8-10, pp. 767-775

  2. Growth and characterization of (InSb)m(InP)n short period superlattices

    Applied Physics Letters, Vol. 70, Núm. 22, pp. 3017-3019

  3. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (lll)B GaAs

    Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, Vol. 19, Núm. 2-4, pp. 329-337

1995

  1. Characterisation of semiconductor structures by high resolution X-ray diffraction

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79

  2. Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices

    Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176

1992

  1. Comparative Equilibrium Analysis of Metalorganic Chemical Vapor Deposition (MOCVD) GaAs Growth Using Trimethylgallium (TMGa) with Arsine or Trimethylarsine (TMAs)

    Japanese Journal of Applied Physics, Vol. 31, Núm. 6 R, pp. 1721-1725

1987

  1. Growth of epitaxial layers of in doping GaAs by the vapour-phase epitaxial Trichloride method using a Gallium-Indium alloyed source

    Japanese Journal of Applied Physics, Vol. 26, Núm. 3 A, pp. L193-L195

1986

  1. Indium isoelectronic doping influence on etch pit density in gaas layers grown by vapour phase epitaxy

    Japanese Journal of Applied Physics, Vol. 25, Núm. 11 A, pp. L899-L901