Publicaciones en las que colabora con F. Roozeboom (7)

2008

  1. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

  2. F+ implants in crystalline Si: The Si interstitial contribution

    Materials Research Society Symposium Proceedings

  3. Si interstitial contribution of F+ implants in crystalline Si

    Journal of Applied Physics, Vol. 103, Núm. 9

2006

  1. Boron pocket and channel deactivation in nMOS transistors with SPER junctions

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76

  2. Fluorine profile distortion upon annealing by the presence of a CVD grown boron box

    AIP Conference Proceedings

2004

  1. Boron diffusion in amorphous silicon and the role of fluorine

    Applied Physics Letters, Vol. 84, Núm. 21, pp. 4283-4285

2003

  1. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting