Publicaciones en las que colabora con RAY DUFFY (14)

2012

  1. Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

    Journal of Applied Physics, Vol. 111, Núm. 3

2010

  1. Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Núm. 1, pp. C1A1-C1A6

2009

  1. Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

    Technical Digest - International Electron Devices Meeting, IEDM

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

  2. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

  3. F+ implants in crystalline Si: The Si interstitial contribution

    Materials Research Society Symposium Proceedings

  4. Si interstitial contribution of F+ implants in crystalline Si

    Journal of Applied Physics, Vol. 103, Núm. 9

2006

  1. Fluorine profile distortion upon annealing by the presence of a CVD grown boron box

    AIP Conference Proceedings

  2. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  2. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

  4. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology