PEDRO
LOPEZ MARTIN
PROFESORES TITULARES DE UNIVERSIDAD
Philips Research Eindhoven
Amsterda, HolandaPublicaciones en colaboración con investigadores/as de Philips Research Eindhoven (11)
2008
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Technical Digest - International Electron Devices Meeting, IEDM
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Evolution of fluorine and boron profiles during annealing in crystalline Si
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381
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F+ implants in crystalline Si: The Si interstitial contribution
Materials Research Society Symposium Proceedings
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Si interstitial contribution of F+ implants in crystalline Si
Journal of Applied Physics, Vol. 103, Núm. 9
2006
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Fluorine profile distortion upon annealing by the presence of a CVD grown boron box
AIP Conference Proceedings
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Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Applied Physics Letters, Vol. 88, Núm. 19
2005
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Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
Journal of Applied Physics, Vol. 97, Núm. 10
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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Role of silicon interstitials in boron cluster dissolution
Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3
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Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
2005 Spanish Conference on Electron Devices, Proceedings
2004
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The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
Materials Science and Engineering B: Solid-State Materials for Advanced Technology