MARIA
ABOY CEBRIAN
PROFESORES TITULARES DE UNIVERSIDAD
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Philips Research Eindhoven
Amsterda, HolandaPublications in collaboration with researchers from Philips Research Eindhoven (12)
2008
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Technical Digest - International Electron Devices Meeting, IEDM
2006
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Boron pocket and channel deactivation in nMOS transistors with SPER junctions
IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76
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Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Applied Physics Letters, Vol. 88, Núm. 19
2005
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Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
Journal of Applied Physics, Vol. 97, Núm. 10
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Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Meeting Abstracts
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate
Proceedings - Electrochemical Society
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Role of silicon interstitials in boron cluster dissolution
Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3
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Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
2005 Spanish Conference on Electron Devices, Proceedings
2004
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The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
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Dopant redistribution effects in preamorphized silicon during low temperature annealing
Technical Digest - International Electron Devices Meeting