MARIA LOURDES PELAZ MONTES-rekin lankidetzan egindako argitalpenak (5)

2016

  1. Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

    Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 3

2005

  1. Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8

2000

  1. Atomistic modeling of complex silicon processing scenarios

    Materials Research Society Symposium - Proceedings

  2. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63