PEDRO
CASTRILLO ROMON
Investigador en el periodo 1993-2013
STMicroelectronics
Ginebra, SuizaPublicaciones en colaboración con investigadores/as de STMicroelectronics (2)
2008
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The role of implanter parameters on implant damage generation: An atomistic simulation study
AIP Conference Proceedings
2007
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Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference