Publicacións nas que colabora con HECTOR GARCIA GARCIA (48)

2016

  1. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Nanoscale Research Letters, Vol. 11, Núm. 1

  2. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  3. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

    Microelectronic Engineering, Vol. 147, pp. 55-58

  3. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

  4. Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  5. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

  6. Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, Núm. 3

2014

  1. Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

    Materials Research Society Symposium Proceedings

2013

  1. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

    Thin Solid Films, Vol. 534, pp. 482-487

  2. Deep level defects on mono-like and polycrystalline silicon solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  3. Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 31, Núm. 1

  4. Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  5. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

  6. Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

    Semiconductor Science and Technology, Vol. 28, Núm. 5

  7. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  8. Photocurrent measurements for solar cells characterization

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  9. The role of defects in solar cells: Control and detection defects in solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices

    Dielectric Material