Francesca Campabadal Segura-rekin lankidetzan egindako argitalpenak (8)

2016

  1. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  2. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883

2015

  1. Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, Núm. 3

2013

  1. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

    Thin Solid Films, Vol. 534, pp. 482-487

  2. Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 31, Núm. 1

2011

  1. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  2. Electron irradiation effects on atomic layer deposited high-k gate dielectrics

    ECS Transactions

  3. Negative-resistance effect in Al2O3 based and nanolaminated MIS structures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011