GERMAN
DIAZ GONZALEZ
Ikertzailea 1989-2007 tartean
![Foto de Ramón](/img/nophoto.png)
Ramón
Cuscó Cornet
Ramón Cuscó Cornet-rekin lankidetzan egindako argitalpenak (23)
2007
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Crystal damage assessment of Be+-implanted GaN by UV Raman scattering
Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73
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Isotopic study of the nitrogen-related modes in N+ -implanted ZnO
Applied Physics Letters, Vol. 90, Núm. 18
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Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2005
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Effect of the implantation temperature on lattice damage of Be +-implanted GaN
Semiconductor Science and Technology, Vol. 20, Núm. 5, pp. 374-377
2003
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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023
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Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
Journal of Applied Physics, Vol. 93, Núm. 5, pp. 2659-2662
2002
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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
International Journal of Modern Physics B
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Raman scattering by an inhomogeneous plasma in implanted semiconductors
Solid State Communications, Vol. 121, Núm. 11, pp. 609-613
2001
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Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000
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Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6567-6570
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Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP
Journal of Luminescence, Vol. 87, pp. 595-597
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Lattice damage study of implanted InGaAs by means of Raman spectroscopy
Journal of Luminescence, Vol. 87, pp. 721-723
1999
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Characterization of Mg+-implanted InP by Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, Núm. 1-4, pp. 454-458
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Raman scattering by LO phonon-plasmon coupled modes in n-type InP
Physical Review B - Condensed Matter and Materials Physics, Vol. 60, Núm. 8, pp. 5456-5463
1997
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Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
Journal of Applied Physics, Vol. 82, Núm. 8, pp. 3736-3739
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Study of Si+-implanted and annealed InP by means of Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 132, Núm. 4, pp. 627-632
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Study of photoexcited carriers in semi-insulating InP by means of Raman spectroscopy
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
1996
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Raman-scattering assessment of Si+-implantation damage in InP
Journal of Applied Physics, Vol. 79, Núm. 8, pp. 3927-3929