PROYECTOS NACIONALES
Proyecto TEC2011-27701 DIREMAS
DE LOS DEFECTOS MICROSCÓPICOS INDUCIDOS POR RADIACIÓN A SUS EFECTOS MACROSCÓPICOS A TRAVÉS DE LA SIMULACIÓN MULTI-ESCALA
Financiador:
MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN
date_range
Duración del 01 de enero de 2012 al 31 de diciembre de 2015
(48 meses)
euro
87.967,00 EUR
De ámbito Nacional. Con carácter Público.
Subprograma:
PROYECTOS DE INVESTIGACIÓN FUNDAMENTAL. SUBPROGRAMA DE INVESTIGACIÓN FUNDAMENTAL NO ORIENTADA.
Investigadores/as
Publicaciones relacionadas con el proyecto (9)
Mostrar por anualidadArtículo
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Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations
2016
Journal of Physics D: Applied Physics
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Atomistic modeling of ion implantation technologies in silicon
2015
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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A detailed approach for the classification and statistical analysis of irradiation induced defects
2015
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
2014
Journal of Applied Physics
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Modeling of defects, dopant diffusion and clustering in silicon
2014
Journal of Computational Electronics
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Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
2014
Applied Physics Express
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Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces
2014
Journal of Physics Condensed Matter
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Sub-ångstrom experimental validation of molecular dynamics for predictive modeling of extended defect structures in Si
2013
Physical Review Letters