PROYECTOS REGIONALES
Projekt VA331U14
EXPLORACIÓN MEDIANTE MODELADO DE ESTRATEGIAS DE INGENIERÍA DE DEFECTOS EN ESTRUCTURAS SEMICONDUCTORAS
date_range
Dauer von 01 von Januar von 2014 bis 31 von Dezember von 2017
(48 Monate)
euro
15.755,00 EUR
Geltungsbereich Regional. Mit dem Zeichen Öffentlich.
Bekanntmachung:
PROGRAMA DE APOYO A PROYECTOS DE INVESTIGACIÓN A INICIAR EN 2014
Programm:
PROGRAMA REGIONAL 2001/2007
Unterprogramm:
PROGRAMA DE APOYO A PROYECTOS DE INVESTIGACIÓN
Forscher/innen
Publikationen im Zusammenhang mit dem Projekt (6)
Nach Typologie anzeigen2018
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W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations
Journal of Electronic Materials
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Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation
Journal of Electronic Materials
2017
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Characterization of amorphous Si generated through classical molecular dynamics simulations
2017 Spanish Conference on Electron Devices, CDE 2017
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Ultrafast Generation of Unconventional {001 } Loops in Si
Physical Review Letters
2016
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Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
Materials Science in Semiconductor Processing