ESCUELA DE INGENIERIAS INDUSTRIALES
Centre
University of Tartu
Tartu, EstoniaPublications en collaboration avec des chercheurs de University of Tartu (9)
2022
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
Electronics (Switzerland), Vol. 11, Núm. 3
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Preface of special issue on coding theory and applications
Cryptography and Communications
2017
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Coding theory and applications: 5th international castle meeting, ICMCTA 2017 Vihula, Estonia, august 28-31, 2017 proceedings
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
2009
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Electrical characterization of high-k based MIS capacitors using flat-band voltage transients
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393
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Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420
2008
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Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors
Journal of the Electrochemical Society, Vol. 155, Núm. 11
2007
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics
Journal of the Electrochemical Society, Vol. 154, Núm. 10
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Study of atomic layer deposited gadolinium oxide thin films on silicon
Materials Research Society Symposium Proceedings