Electricidad y Electrónica
Departamento
![Foto de RAY](/img/nophoto.png)
RAY
DUFFY
Publicaciones en las que colabora con RAY DUFFY (24)
2012
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Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
Journal of Applied Physics, Vol. 111, Núm. 3
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Preface: 19th International Conference on Ion Implantation Technology
AIP Conference Proceedings
2011
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The curious case of thin-body Ge crystallization
Applied Physics Letters, Vol. 99, Núm. 13
2010
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Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Núm. 1, pp. C1A1-C1A6
2009
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Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices
Technical Digest - International Electron Devices Meeting, IEDM
2008
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Technical Digest - International Electron Devices Meeting, IEDM
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Evolution of fluorine and boron profiles during annealing in crystalline Si
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381
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F+ implants in crystalline Si: The Si interstitial contribution
Materials Research Society Symposium Proceedings
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Si interstitial contribution of F+ implants in crystalline Si
Journal of Applied Physics, Vol. 103, Núm. 9
2006
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Boron pocket and channel deactivation in nMOS transistors with SPER junctions
IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76
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Fluorine profile distortion upon annealing by the presence of a CVD grown boron box
AIP Conference Proceedings
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Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Applied Physics Letters, Vol. 88, Núm. 19
2005
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Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
Journal of Applied Physics, Vol. 97, Núm. 10
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Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Boron diffusion in amorphous silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Meeting Abstracts
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate
Proceedings - Electrochemical Society
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Role of silicon interstitials in boron cluster dissolution
Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3