Publicaciones en las que colabora con S. Brad Herner (5)

1998

  1. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

  2. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

  3. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  4. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

    Technical Digest - International Electron Devices Meeting, IEDM