STMicroelectronics-ko ikertzaileekin lankidetzan egindako argitalpenak (4)

2014

  1. Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

    Applied Physics Express, Vol. 7, Núm. 2

2008

  1. Atomistic simulation and subsequent optimization of boron USJ using pre-amorphization and high ramp rates annealing

    Materials Research Society Symposium Proceedings

  2. The role of implanter parameters on implant damage generation: An atomistic simulation study

    AIP Conference Proceedings

2007

  1. Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference