Electricidad y Electrónica
Departamento
University of Surrey
Guildford, Reino UnidoPublicaciones en colaboración con investigadores/as de University of Surrey (8)
2014
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Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
Journal of Applied Physics, Vol. 115, Núm. 14
2013
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Sub-ångstrom experimental validation of molecular dynamics for predictive modeling of extended defect structures in Si
Physical Review Letters, Vol. 110, Núm. 16
2007
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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, Núm. 1-2 SPEC. ISS., pp. 152-156
2006
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Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling
Technical Digest - International Electron Devices Meeting, IEDM
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
2005
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E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Meeting Abstracts
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Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate
Proceedings - Electrochemical Society