Electricidad y Electrónica

1995

1. A comparison between PA‐FTTR and FT‐Raman spectroscopies in the structural analysis of annealed injected‐moulded poly (ethylene terephthalate)

   Macromolecular Symposia, Vol. 94, Núm. 1, pp. 129-144

2. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

3. An improved molecular dynamics scheme for ion bombardment simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

4. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

   Applied Physics Letters, pp. 409

5. Comparison between disaccommodation and ferromagnetic resonance measurements in polycrystalline nickel ferrites

   Applied Physics A Materials Science & Processing, Vol. 60, Núm. 3, pp. 303-307

6. Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP

   Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5325-5330

7. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

8. Detailed computer simulation of ion implantation processes into crystals

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

9. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

10. Disaccommodation spectra of single crystal nickel ferrites

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 3, pp. 1919-1920

11. Frequency dependence of ac susceptibility in superconducting BiPbSrCaCuO

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1341-1342

12. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

13. Magnetic disaccommodation in single yttrium iron garnet crystal

    Applied Physics Letters, pp. 564

14. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

15. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210

16. Short-range magnetic after-effect in R2Fe14BHx; R Nd, Ho

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1049-1050

17. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395