Electricidad y Electrónica

2005

1. 2D-TLM model for propagation in biisotropic media

   35th European Microwave Conference 2005 - Conference Proceedings

2. A comparative study of atomic layer deposited advanced high-k dielectrics

   2005 Spanish Conference on Electron Devices, Proceedings

3. A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers

   Proceedings of SPIE - The International Society for Optical Engineering

4. A multiresolution model of transient microwave signals in dispersive chiral media

   2005 IEEE/ACES International Conference on Wireless Communications and Applied Computational Electromagnetics

5. A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

   Computational Materials Science

6. Amorphous layer depth dependence on implant parameters during Si self-implantation

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

7. Atomistic analysis of annealing behavior of amorphous regions

   2005 Spanish Conference on Electron Devices, Proceedings

8. Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

   Computational Materials Science

9. Atomistic modeling of ion beam induced amorphization in silicon

   Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

10. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

11. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

12. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

13. Boron diffusion in amorphous silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

14. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

15. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

16. Damage buildup model with dose rate and temperature dependence

    2005 Spanish Conference on Electron Devices, Proceedings

17. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

18. Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

19. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

20. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society