Electricidad y Electrónica

2011

1. A parallel, CT-ΣΔ based ADC for OFDM UWB receivers in 130 nm CMOS

   2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011

2. A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks

   Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

3. Atomistic process simulation for future generation nanodevices

   Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

4. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

   Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

5. Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates

   Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

6. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

   Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

7. Electron irradiation effects on atomic layer deposited high-k gate dielectrics

   ECS Transactions

8. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

   Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

9. Modeling of advanced ion implantation technologies in semiconductors

   Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011

10. Molecular implants and cold implants: Two new strategies for junction formation of future Si devices

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

11. Negative-resistance effect in Al2O3 based and nanolaminated MIS structures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

12. Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

    Journal of Applied Physics

13. Simulation study of ion implanted defects associated to luminescence centers in silicon

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011