Publicaciones (20) Publicaciones en las que ha participado algún/a investigador/a

1995

  1. A comparison between PA‐FTTR and FT‐Raman spectroscopies in the structural analysis of annealed injected‐moulded poly (ethylene terephthalate)

    Macromolecular Symposia, Vol. 94, Núm. 1, pp. 129-144

  2. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

  3. An improved molecular dynamics scheme for ion bombardment simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

  4. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  5. Caracterización en estructuras MOS del dañado eléctrico generado por procesos de Grabado Iónico Reactivo

    Valladolid : Universidad de Valladolid, 1995

  6. Comparison between disaccommodation and ferromagnetic resonance measurements in polycrystalline nickel ferrites

    Applied Physics A Materials Science & Processing, Vol. 60, Núm. 3, pp. 303-307

  7. Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP

    Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5325-5330

  8. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

  9. Design of vertical power MOSFETs in SiC

    Proceedings of the International Conference on Microelectronics

  10. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

  11. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  12. Disaccommodation spectra of single crystal nickel ferrites

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 3, pp. 1919-1920

  13. Frequency dependence of ac susceptibility in superconducting BiPbSrCaCuO

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1341-1342

  14. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  15. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

  16. Magnetic disaccommodation in single yttrium iron garnet crystal

    Applied Physics Letters, pp. 564

  17. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

  18. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210

  19. Short-range magnetic after-effect in R2Fe14BHx; R Nd, Ho

    Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1049-1050

  20. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395