Departamento
Electricidad y Electrónica
Publicaciones (20) Publicaciones en las que ha participado algún/a investigador/a
1995
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A comparison between PA‐FTTR and FT‐Raman spectroscopies in the structural analysis of annealed injected‐moulded poly (ethylene terephthalate)
Macromolecular Symposia, Vol. 94, Núm. 1, pp. 129-144
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Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078
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An improved molecular dynamics scheme for ion bombardment simulations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11
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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
Applied Physics Letters, pp. 409
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Caracterización en estructuras MOS del dañado eléctrico generado por procesos de Grabado Iónico Reactivo
Valladolid : Universidad de Valladolid, 1995
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Comparison between disaccommodation and ferromagnetic resonance measurements in polycrystalline nickel ferrites
Applied Physics A Materials Science & Processing, Vol. 60, Núm. 3, pp. 303-307
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Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP
Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5325-5330
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Defects from implantation in silicon by linked Marlow-molecular dynamics calculations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182
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Design of vertical power MOSFETs in SiC
Proceedings of the International Conference on Microelectronics
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Detailed computer simulation of ion implantation processes into crystals
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193
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Diffusion and interactions of point defects in silicon: molecular dynamics simulations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255
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Disaccommodation spectra of single crystal nickel ferrites
Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 3, pp. 1919-1920
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Frequency dependence of ac susceptibility in superconducting BiPbSrCaCuO
Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1341-1342
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Ion implantation and transient enhanced diffusion
Technical Digest - International Electron Devices Meeting
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Low energy ion implantation simulation using a modified binary collision approximation code
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231
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Magnetic disaccommodation in single yttrium iron garnet crystal
Applied Physics Letters, pp. 564
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Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304
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Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210
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Short-range magnetic after-effect in R2Fe14BHx; R Nd, Ho
Journal of Magnetism and Magnetic Materials, Vol. 140-144, Núm. PART 2, pp. 1049-1050
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Simulation of cluster evaporation and transient enhanced diffusion in silicon
Applied Physics Letters, pp. 2395