Electricidad y Electrónica

1997

1. A comparative study of time domain techniques in multiexponential fitting

   International Journal of Applied Electromagnetics and Mechanics, Vol. 8, Núm. 2, pp. 185-204

2. A quick and low noise sensitive technique to fit multiexponential responses

   Computational Materials Science, Vol. 7, Núm. 4, pp. 351-360

3. An EPR study of the ZnxCd1-XCr2S4 system

   Physica Status Solidi (B) Basic Research, Vol. 201, Núm. 2

4. Atomistic model of transient enhanced diffusion and clustering of boron in silicon

   Materials Research Society Symposium - Proceedings

5. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

   Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

6. Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

   Technical Digest - International Electron Devices Meeting, IEDM

7. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

   Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

8. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

   Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

9. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

   Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

10. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

11. Induction of magnetic accommodation processes in polycrystalline yttrium iron garnet

    Journal De Physique. IV : JP, Vol. 7, Núm. 1

12. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

13. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

14. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143

15. The magnetic disaccommodation in titanium doped magnetite

    Journal De Physique. IV : JP, Vol. 7, Núm. 1

16. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

17. Thin film resistors and capacitors for advanced packaging

    Proceedings of the International Symposium and Exhibition on Advanced Packaging Materials Processes, Properties and Interfaces, pp. 71-74