Publicaciones (19) Publicaciones en las que ha participado algún/a investigador/a

1998

  1. About vacancy and Fe2+ contents in LiZnTi ferrites

    Materials Letters, Vol. 37, Núm. 4-5, pp. 187-191

  2. Anomalous magnetic disaccommodation in yttrium iron garnet

    Materials Letters, Vol. 34, Núm. 3-6, pp. 154-156

  3. Aplicaciones de la teoría de perturbaciones para la medida de parámetros de materiales bi-isótropos

    XIII Simposium Nacional de la Unión Científica Internacional de Radio: Pamplona 16, 17 y 18 de septiembre de 1998. Libro de actas

  4. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  5. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

  6. Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures

    ELECTRICALLY BASED MICROSTRUCTURAL CHARACTERIZATION II

  7. Conductance transients study of slow traps in Al/SiNx:H/Si and Al/SiNx:H/InP metal-insulator-semiconductor structures

    Materials Research Society Symposium - Proceedings

  8. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

  9. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

  10. Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures

    Journal of Applied Physics, Vol. 83, Núm. 1, pp. 332-338

  11. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

  12. Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603

  13. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  14. Magnetic after-effect in polycrystalline Ca-doped gadolinium iron garnets

    Physica Status Solidi (A) Applied Research, Vol. 169, Núm. 1, pp. 145-151

  15. Magnetic disaccommodation in Sr doped magnetite

    Journal De Physique. IV : JP, Vol. 8, Núm. 2

  16. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

  17. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings

  18. Theoretical approach to frequency-dependent dynamics of domain walls in magnetically ordered materials

    Physical Review B - Condensed Matter and Materials Physics, Vol. 58, Núm. 13, pp. 8640-8645

  19. Tratamiento de guías dieléctricas anisótropas mediante técnicas numéricas en el dominio del tiempo

    XIII Simposium Nacional de la Unión Científica Internacional de Radio: Pamplona 16, 17 y 18 de septiembre de 1998. Libro de actas