Departamento
Electricidad y Electrónica
Publicaciones (21) Publicaciones en las que ha participado algún/a investigador/a
2001
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Algorithm for statistical noise reduction in three-dimensional ion implant simulations
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 174, Núm. 4, pp. 433-438
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Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001
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Atomistic modeling of amorphization in silicon
Materials Research Society Symposium - Proceedings
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Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275
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C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267
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DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321
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Dependence of magnetic after-effect processes in recording media on the moving parameter of the Preisach-Arrhenius model
IEEE Transactions on Magnetics
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Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
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Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, Núm. 7, pp. 4479-4484
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Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx:H/InP structures
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, Núm. 1, pp. 186-191
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Magnetic aftereffect and electrical conductivity in double perovskite Ba2FeMoO6
Journal of Applied Physics, Vol. 89, Núm. 11 II, pp. 7642-7644
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Magnetic aftereffect dependence on the moving parameter of the Preisach model
Physica B: Condensed Matter
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Magnetic aftereffects in magnesium ferrites
IEEE Transactions on Magnetics, Vol. 37, Núm. 4, pp. 3028-3032
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Magnetic disaccommodation in Sn substituted magnetite
Journal of Magnetism and Magnetic Materials, Vol. 226-230, Núm. PART II, pp. 1409-1411
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Micromagnetics of thermally activated switching in nonuniformly magnetized nanodots
Journal of Magnetism and Magnetic Materials, Vol. 226-230, Núm. PART II, pp. 1242-1244
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Modelling dispersive dielectrics in TLM method
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 14, Núm. 1, pp. 15-30
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Overcoming noise sources in multiexponential fitting: A comparison of different algorithms
Journal of Computational Methods in Sciences and Engineering, Vol. 1, Núm. 2-3, pp. 213-228
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Stability of defects in crystalline silicon and their role in amorphization
Physical Review B - Condensed Matter and Materials Physics, Vol. 64, Núm. 4
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Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric
Solid-State Electronics, Vol. 45, Núm. 8, pp. 1441-1450