Publicaciones (45) Publicaciones en las que ha participado algún/a investigador/a

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. A new technique for obtaining the activation energy distribution of a relaxing system

    Applied Physics A: Materials Science and Processing, Vol. 77, Núm. 3-4, pp. 543-547

  3. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

  4. An approach to multi-resolution in time domain based on the discrete wavelet transform

    Applied Computational Electromagnetics Society Journal, Vol. 18, Núm. 3, pp. 210-218

  5. Analysis of magnetic aftereffects in strontium hexagonal ferrites with W-type stoichiometry

    Journal of Applied Physics

  6. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

  7. Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1013-1018

  8. Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  9. Atomistic modeling of amorphization and recrystallization in silicon

    Applied Physics Letters, Vol. 82, Núm. 13, pp. 2038-2040

  10. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

    Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168

  11. Computational study of low-field domain wall mobility in nanowires of rectangular cross section

    Digests of the Intermag Conference

  12. Computational study of low-field domain wall mobility in nanowires rectangular cross section

    Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

  13. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  14. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  15. Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

    Solid-State Electronics

  16. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting

  17. Effect of Sn Addition on the Magnetic Aftereffects of Yttrium Iron Garnets

    IEEE Transactions on Magnetics

  18. Effect of Sn addition on the magnetic aftereffects of yttrium iron garnets

    Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

  19. Effect of Sn addition on the magnetic aftereffects of yttrium iron garnets

    Digests of the Intermag Conference

  20. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290