Departamento
Electricidad y Electrónica
Publicaciones (45) Publicaciones en las que ha participado algún/a investigador/a
2003
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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A new technique for obtaining the activation energy distribution of a relaxing system
Applied Physics A: Materials Science and Processing, Vol. 77, Núm. 3-4, pp. 543-547
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A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology
Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209
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An approach to multi-resolution in time domain based on the discrete wavelet transform
Applied Computational Electromagnetics Society Journal, Vol. 18, Núm. 3, pp. 210-218
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Analysis of magnetic aftereffects in strontium hexagonal ferrites with W-type stoichiometry
Journal of Applied Physics
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Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168
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Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1013-1018
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Atomistic modeling of B activation and deactivation for ultra-shallow junction formation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Atomistic modeling of amorphization and recrystallization in silicon
Applied Physics Letters, Vol. 82, Núm. 13, pp. 2038-2040
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Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168
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Computational study of low-field domain wall mobility in nanowires of rectangular cross section
Digests of the Intermag Conference
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Computational study of low-field domain wall mobility in nanowires rectangular cross section
Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films
Solid-State Electronics
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Dopant redistribution effects in preamorphized silicon during low temperature annealing
Technical Digest - International Electron Devices Meeting
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Effect of Sn Addition on the Magnetic Aftereffects of Yttrium Iron Garnets
IEEE Transactions on Magnetics
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Effect of Sn addition on the magnetic aftereffects of yttrium iron garnets
Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference
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Effect of Sn addition on the magnetic aftereffects of yttrium iron garnets
Digests of the Intermag Conference
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290