Publications by the researcher in collaboration with MARÍA HELENA CASTAN LANASPA (120)

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  2. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  3. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

    Nanomaterials, Vol. 12, Núm. 15

  4. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  5. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  6. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

    Nanotechnology, Vol. 32, Núm. 33

  3. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  4. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  5. Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

    ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163

  6. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  7. Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

    ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8

  8. Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

    ECS Transactions

  9. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  10. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

  11. Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

    ECS Transactions

2020

  1. Current Pulses to Control the Conductance in RRAM Devices

    IEEE Journal of the Electron Devices Society, Vol. 8, pp. 291-296