Publications by the researcher in collaboration with GERMAN DIAZ GONZALEZ (16)

2018

  1. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

    Journal of Electronic Materials

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351

2005

  1. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

  2. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  3. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828