2ET
Center
Oak Ridge National Laboratory
Oak Ridge, Estados UnidosPublications in collaboration with researchers from Oak Ridge National Laboratory (8)
2004
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Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C
Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12
2003
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Enhanced low temperature electrical activation of B in Si
Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217
2001
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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275
1999
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301
1998
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274
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Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25
1997
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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050
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Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143