Publications in collaboration with researchers from Lawrence Livermore National Laboratory (13)

2003

  1. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

  2. Atomistic modeling of amorphization and recrystallization in silicon

    Applied Physics Letters, Vol. 82, Núm. 13, pp. 2038-2040

1996

  1. Atomic scale simulations of arsenic ion implantation and annealing in silicon

    Materials Research Society Symposium - Proceedings

  2. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411

  3. Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

    Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169

  4. Ion-beam processing of silicon at keV energies: A molecular-dynamics study

    Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695

  5. Molecular dynamics studies of the ion beam induced crystallization in silicon

    Materials Research Society Symposium - Proceedings

  6. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

  7. Simulations of thin film deposition from atomic and cluster beams

    Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7

1995

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  2. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

  3. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  4. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210