ETS INGENIEROS TELECOMUNICACION
Center


STMicroelectronics
Ginebra, SuizaPublications in collaboration with researchers from STMicroelectronics (4)
2014
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Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, Vol. 7, Núm. 2
2008
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Atomistic simulation and subsequent optimization of boron USJ using pre-amorphization and high ramp rates annealing
Materials Research Society Symposium Proceedings
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The role of implanter parameters on implant damage generation: An atomistic simulation study
AIP Conference Proceedings
2007
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Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference