ETS INGENIEROS TELECOMUNICACION

1997

1. Analytical parametrization of a 2D real propagation space in terms of complex electromagnetic beams

   IEICE Transactions on Electronics, Vol. E80-C, Núm. 11, pp. 1434-1439

2. Application of high-resolution X-ray diffractometry to the structural study of epitaxial multilayers on novel index surfaces

   Microelectronics Journal, Vol. 28, Núm. 8-10, pp. 777-784

3. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

   Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

4. Charge accumulation effects in InGaAs/GaAs [111]oriented piezoelectric multiple quantum wells

   Microelectronics Journal, Vol. 28, Núm. 8-10, pp. 767-775

5. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

   Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

6. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

   Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

7. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

   Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

8. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

   Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

9. Growth and characterization of (InSb)m(InP)n short period superlattices

   Applied Physics Letters, Vol. 70, Núm. 22, pp. 3017-3019

10. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (lll)B GaAs

    Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, Vol. 19, Núm. 2-4, pp. 329-337

11. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

12. Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/ GaAs superlattices grown on misoriented (111)B GaAs

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3297-3305

13. Obtención conjunta de las informaciones tridimensional y cromática. Primera aproximación a la caracterización óptica de superficies

    Informática y automática: revista de la Asociación Española de Informática y Automática, Vol. 30, Núm. 3, pp. 19-33

14. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

15. Recent progress in focussing gamma rays

    European Space Agency, (Special Publication) ESA SP, pp. 353-356

16. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143

17. Test of a high-heat-load double-crystal diamond monochromator at the advanced photon source

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 400, Núm. 2-3, pp. 476-483

18. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109