Centro
ETS INGENIEROS TELECOMUNICACION
Artigos (18) Publicacións nas que participase algún/ha investigador/a
1997
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Analytical parametrization of a 2D real propagation space in terms of complex electromagnetic beams
IEICE Transactions on Electronics, Vol. E80-C, Núm. 11, pp. 1434-1439
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Application of high-resolution X-ray diffractometry to the structural study of epitaxial multilayers on novel index surfaces
Microelectronics Journal, Vol. 28, Núm. 8-10, pp. 777-784
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B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287
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Charge accumulation effects in InGaAs/GaAs [111]oriented piezoelectric multiple quantum wells
Microelectronics Journal, Vol. 28, Núm. 8-10, pp. 767-775
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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150
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Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345
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Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation
Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828
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Growth and characterization of (InSb)m(InP)n short period superlattices
Applied Physics Letters, Vol. 70, Núm. 22, pp. 3017-3019
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High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (lll)B GaAs
Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, Vol. 19, Núm. 2-4, pp. 329-337
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Molecular dynamics simulations of ion bombardment processes
Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896
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Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/ GaAs superlattices grown on misoriented (111)B GaAs
Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3297-3305
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Obtención conjunta de las informaciones tridimensional y cromática. Primera aproximación a la caracterización óptica de superficies
Informática y automática: revista de la Asociación Española de Informática y Automática, Vol. 30, Núm. 3, pp. 19-33
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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050
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Recent progress in focussing gamma rays
European Space Agency, (Special Publication) ESA SP, pp. 353-356
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Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143
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Test of a high-heat-load double-crystal diamond monochromator at the advanced photon source
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 400, Núm. 2-3, pp. 476-483
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Thermal emission processes of DX centres in AlxGa1-xAs:Si
Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109