Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

  1. Quintanilla, L.
  2. Dueñas, S.
  3. Castán, E.
  4. Pinacho, R.
  5. Barbolla, J.
  6. Martín, J.M.
  7. González-Díaz, G.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1997

Volume: 81

Issue: 7

Pages: 3143-3150

Type: Article

DOI: 10.1063/1.364348 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus