Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
ISSN: 0021-8979
Année de publication: 1997
Volumen: 81
Número: 7
Pages: 3143-3150
Type: Article
ISSN: 0021-8979
Année de publication: 1997
Volumen: 81
Número: 7
Pages: 3143-3150
Type: Article