Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
ISSN: 0021-8979
Année de publication: 1999
Volumen: 86
Número: 9
Pages: 4855-4860
Type: Article
ISSN: 0021-8979
Année de publication: 1999
Volumen: 86
Número: 9
Pages: 4855-4860
Type: Article