Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
ISSN: 0021-8979
Année de publication: 1999
Volumen: 85
Número: 11
Pages: 7978-7980
Type: Article
ISSN: 0021-8979
Année de publication: 1999
Volumen: 85
Número: 11
Pages: 7978-7980
Type: Article