Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

  1. Pelaz, L.
  2. Marques, L.A.
  3. Gilmer, G.H.
  4. Jaraiz, M.
  5. Barbolla, J.
Journal:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Year of publication: 2001

Volume: 180

Issue: 1-4

Pages: 12-16

Type: Conference paper

DOI: 10.1016/S0168-583X(01)00390-1 GOOGLE SCHOLAR
Data source: Scopus