Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

  1. Pelaz, L.
  2. Marques, L.A.
  3. Gilmer, G.H.
  4. Jaraiz, M.
  5. Barbolla, J.
Aldizkaria:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Argitalpen urtea: 2001

Alea: 180

Zenbakia: 1-4

Orrialdeak: 12-16

Mota: Biltzar ekarpena

DOI: 10.1016/S0168-583X(01)00390-1 GOOGLE SCHOLAR
Datuen iturria: Scopus