Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

  1. Pelaz, L.
  2. Marques, L.A.
  3. Gilmer, G.H.
  4. Jaraiz, M.
  5. Barbolla, J.
Revue:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Année de publication: 2001

Volumen: 180

Número: 1-4

Pages: 12-16

Type: Communication dans un congrès

DOI: 10.1016/S0168-583X(01)00390-1 GOOGLE SCHOLAR
La source de données: Scopus