Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

  1. Pelaz, L.
  2. Marques, L.A.
  3. Gilmer, G.H.
  4. Jaraiz, M.
  5. Barbolla, J.
Revista:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Ano de publicación: 2001

Volume: 180

Número: 1-4

Páxinas: 12-16

Tipo: Achega congreso

DOI: 10.1016/S0168-583X(01)00390-1 GOOGLE SCHOLAR
Fonte de datos: Scopus