Boron pocket and channel deactivation in nMOS transistors with SPER junctions

  1. Duffy, R.
  2. Aboy, M.
  3. Venezia, V.C.
  4. Pelaz, L.
  5. Severi, S.
  6. Pawlak, B.J.
  7. Eyben, P.
  8. Janssens, T.
  9. Vandervorst, W.
  10. Loo, J.
  11. Roozeboom, F.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2006

Volume: 53

Issue: 1

Pages: 71-76

Type: Article

DOI: 10.1109/TED.2005.860651 GOOGLE SCHOLAR
Data source: Scopus