Boron pocket and channel deactivation in nMOS transistors with SPER junctions

  1. Duffy, R.
  2. Aboy, M.
  3. Venezia, V.C.
  4. Pelaz, L.
  5. Severi, S.
  6. Pawlak, B.J.
  7. Eyben, P.
  8. Janssens, T.
  9. Vandervorst, W.
  10. Loo, J.
  11. Roozeboom, F.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2006

Alea: 53

Zenbakia: 1

Orrialdeak: 71-76

Mota: Artikulua

DOI: 10.1109/TED.2005.860651 GOOGLE SCHOLAR
Datuen iturria: Scopus