Boron pocket and channel deactivation in nMOS transistors with SPER junctions

  1. Duffy, R.
  2. Aboy, M.
  3. Venezia, V.C.
  4. Pelaz, L.
  5. Severi, S.
  6. Pawlak, B.J.
  7. Eyben, P.
  8. Janssens, T.
  9. Vandervorst, W.
  10. Loo, J.
  11. Roozeboom, F.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2006

Volumen: 53

Número: 1

Pages: 71-76

Type: Article

DOI: 10.1109/TED.2005.860651 GOOGLE SCHOLAR
La source de données: Scopus