An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon

  1. Edmondson, P.D.
  2. Birtcher, R.C.
  3. Vishnyakov, V.M.
  4. Lopez, P.
  5. Pelaz, L.
  6. Marques, L.A.
  7. Donnelly, S.E.
Actes de conférence:
Journal of Physics: Conference Series

ISSN: 1742-6596,  1742-6588

Année de publication: 2006

Volumen: 26

Número: 1

Pages: 284-287

Type: Communication dans un congrès

DOI: 10.1088/1742-6596/26/1/068 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus