An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon

  1. Edmondson, P.D.
  2. Birtcher, R.C.
  3. Vishnyakov, V.M.
  4. Lopez, P.
  5. Pelaz, L.
  6. Marques, L.A.
  7. Donnelly, S.E.
Actas:
Journal of Physics: Conference Series

ISSN: 1742-6596,  1742-6588

Ano de publicación: 2006

Volume: 26

Número: 1

Páxinas: 284-287

Tipo: Achega congreso

DOI: 10.1088/1742-6596/26/1/068 GOOGLE SCHOLAR lock_openAcceso aberto editor
Fonte de datos: Scopus