Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

  1. García, H.
  2. Boo, J.
  3. Vinuesa, G.
  4. Ossorio, Ó.G.
  5. Sahelices, B.
  6. Dueñas, S.
  7. Castán, H.
  8. González, M.B.
  9. Campabadal, F.
Revue:
Electronics (Switzerland)

ISSN: 2079-9292

Année de publication: 2021

Volumen: 10

Número: 22

Type: Article

DOI: 10.3390/ELECTRONICS10222816 GOOGLE SCHOLAR lock_openAccès ouvert editor

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