Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

  1. Castán, H.
  2. Dueñas, S.
  3. García, H.
  4. Ossorio, O.G.
  5. Domínguez, L.A.
  6. Sahelices, B.
  7. Miranda, E.
  8. González, M.B.
  9. Campabadal, F.
Zeitschrift:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Datum der Publikation: 2018

Ausgabe: 124

Nummer: 15

Art: Artikel

DOI: 10.1063/1.5024836 GOOGLE SCHOLAR lock_openUVADOC editor
Datenquelle: Scopus