Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
- Castán, H.
- Dueñas, S.
- García, H.
- Ossorio, O.G.
- Domínguez, L.A.
- Sahelices, B.
- Miranda, E.
- González, M.B.
- Campabadal, F.
ISSN: 1089-7550, 0021-8979
Datum der Publikation: 2018
Ausgabe: 124
Nummer: 15
Art: Artikel