Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

  1. Castán, H.
  2. Dueñas, S.
  3. García, H.
  4. Ossorio, O.G.
  5. Domínguez, L.A.
  6. Sahelices, B.
  7. Miranda, E.
  8. González, M.B.
  9. Campabadal, F.
Revue:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Année de publication: 2018

Volumen: 124

Número: 15

Type: Article

DOI: 10.1063/1.5024836 GOOGLE SCHOLAR lock_openUVADOC editor
La source de données: Scopus