Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

  1. Castán, H.
  2. Dueñas, S.
  3. García, H.
  4. Ossorio, O.G.
  5. Domínguez, L.A.
  6. Sahelices, B.
  7. Miranda, E.
  8. González, M.B.
  9. Campabadal, F.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2018

Alea: 124

Zenbakia: 15

Mota: Artikulua

DOI: 10.1063/1.5024836 GOOGLE SCHOLAR lock_openUVADOC editor
Datuen iturria: Scopus