Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

  1. Castán, H.
  2. Dueñas, S.
  3. García, H.
  4. Ossorio, O.G.
  5. Domínguez, L.A.
  6. Sahelices, B.
  7. Miranda, E.
  8. González, M.B.
  9. Campabadal, F.
Journal:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Year of publication: 2018

Volume: 124

Issue: 15

Type: Article

DOI: 10.1063/1.5024836 GOOGLE SCHOLAR lock_openUVADOC editor
Data source: Scopus